variable-boundary layer

Breakdown Characteristics of SOI LDMOS High Voltage Devices with Variable Low k Dielectric Layer

可变低k介质层SOI LDMOS高压器件的耐压特性

Data – Contains upper-layer information and has a variable length of up to 64 bits.

资料– - 包含上层的资讯,变动的长度可达64位元.

Ischemia reperfusion group layer 4 organizational structure variable density, interstitial edema.

缺血再灌注损伤组4层组织结构变致密、间质明显水肿。

Aiming at two main problems of SOI device the low vertical breakdown voltage and self-heating effect a novel SOI high-voltage power device with a variable-k dielectric layer ( VkD) is proposed.

针对常规SOI器件纵向耐压低和自热效应两个主要问题，提出了变k介质埋层SOI（variablekdielectricburiedlayerSOI，VkDSOI）高压功率器件新结构。

A novel SOI high voltage device structure with a variable low k dielectric layer ( VLkD) is proposed. The buried layer is made up of dielectrics with variable k.

提出了一种可变低k（相对介电常数）介质层（variablelowkdielectriclayer，VLkD）SOI高压器件新结构，该结构的埋层由可变k的不同介质组成。